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Малютина-Бронская Виктория Владимировна

Кандидат технических наук, доцент
Доцент Мехатроника и искусственный интеллект Машиностроительный факультет

Образование: высшее

Преподаваемые дисциплины:

  • Сенсорный контроль в мехатронике;
  • Технологии сенсорного контроля.

 Основные публикации:

  1. M.D.Efremov, G.N.Kamaev, G.A.Kachurin, A.V.Kretinin, V.A.Volodin, V.V.Malyutina-Bronskaya, D.V.Marin, S.A.Arzhannikova, S.G.Yanovskaya, Coulomb blockade in silicon nanocrystals embedded in SiO2 matrix, Solid State Phenomena, 2003, V.95-96, P.629-634.
  2. M.D.Efremov, G.N.Kamaev, V.A.Volodin, S.A.Arzhannikova, G.A.Kachurin, S.G.Cherkova, A.V.Kretinin, V.V.Malyutina-Bronskaya, D.V.Marin, Coulomb blockade of the conductivity of SiOx films due to one-electron charging of a silicon quantum dot in a chain of electron states, Semiconductors, 2005, V. 39, P. 910-916.
  3. A.M.Saad, A.K.Fedotov, I.A.Svito, J.A.Fedotova, B.V.Andrievsky, Yu.E.Kalinin, A.A.Patryn, V.V.Fedotova, V.V.Malyutina-Bronskaya, A.V.Mazanik, A.V.Sitnikov, Impedance and magnetization of CoFeZr nanoclusters embedded into alumina matrix, Journal of Alloys and Compounds, 2006, V.423, No. 1-2, P. 176 – 180.
  4. V.V.Malyutina-Bronskaya, V.B.Zalesski, V.M.Kravchenko, A.A.Khodin, D.A.Kotov, M.Plötner, Electrical properties of nanostructured vanadium oxide thin films on silicon substrates, Proc. Internat. Conf. “Physics, Chemistry and Application of Nanostructures (Nanomeeting – 2009)”, V.E.Borisenko, S.V.Gaponenko, V.S.Gurin (Eds.), Minsk, 2009, P. 228-231.
  5. V.Malyutina-Bronskaya, V.Zalesski, T.Leonova,  Electrical properties of zinc oxide thin films doped by rare-earth elements, Doklady BGUIR, 2011, V. 6(60), P. 39-43 (in Russian).
  6. V.V.Malyutina-Bronskaya, O.A.Grebenschikov, V.B.Zalesski, T.R.Leonova, Analysis of the current-voltage characteristics of the ZnO:RE films on silicon substrates by the Therman method, Kondensirovannye Sredy i Mezhfaznye Granitsy, 2012, V.14, No.4, P. 433 – 437  (in Russian).
  7. V.V.Malyutina-Bronskaya, V.B.Zalesski, A.I.Konoiko, V.S.Malyshev, Silicon solar cells with vertical p-n junctions for hybrid solar cells, Proc. of the 2nd International Conference on Modern Applications of Nanotechnology  (Minsk, Belarus, 6-8 May 2015), 2015, P. P075-1-2.
  8. V.V.Malyutina-Bronskaya, A.V.Semchenko, V.V.Sidsky, V.E.Fedorov, Properties of the ZnO:Er3+ thin films obtained by the sol-gel method, Semiconductors, 2017, V. 51, P. 392-395.
  9. V.Malyutina-Bronskaya, A.M.Saad, V.Zalesski, T.Leonova,  A.Mudryi, V.Fedorov, Morphological, structural and room temperature optical properties of ZnO:Eu layers deposited by RF-Sputtering, Optical Materials, 2019, V. 88, P. 718 – 722.
  10. V.S.Kalinovskii, E.V.Kontrosh, A.V.Andreeva, E.A.Ionova, A.V.Malevskaya, V.M.Andreev, V.V.Malyutina-Bronskaya, V.B.Zalesskiy, A.M.Lemeshevskaya, V.I.Kuzoro, V.I.Khalimanovich, M.K.Zayceva, CPV module based on a hybrid solar cell, AIP Conf. Proc., 2019, V. 2149, P. 030003.
  11. V.S.Kalinovskii, E.V.Kontrosh, A.V.Andreeva, V.M.Andreev, V.V.Malyutina-Bronskaya, V.B.Zalesskii, A.M.Lemeshevskaya, V.I.Kuzoro, V.I.Khalimanovich, M.K.Zayceva, Hybrid solar cells with a sunlight concentrator system, Technical Physics Letters, 2019, V. 45, P. 850-852.
  12. V.Malyutina-Bronskaya, V.Zalesski, D.Zhihulin, A.Mudryi, Structural, optical and photoelectric properties of Tb doped ZnO thin films for device applications, Optical Materials, 2022, V. 127, P. 112305.
  13. V.V.Sidsky, V.V.Malyutina-Bronskaya, S.A.Soroka, K.D.Danilchenko, A.V.Semchenko, V.A.Pilipenko, Photoactive and structure properties of ZnO:XMgO nanocomposite sol–gel films on the surface of silicon - Chapter in the Book: S.Khakhomov, I.Semchenko, O.Demidenko, D.Kovalenko (Eds.), Research and Education: Traditions and Innovations. Inter-Academia 2021. Lecture Notes in Networks and Systems, Springer, Singapore, 2022, V. 422, P. 227–235.
  14. A.V.Semchenko, G.Y.Ayvazyan, V.V.Malyutina-Bronskaya, S.A.Khahomov, D.L.Kovalenko, A.A.Boiko, V.V.Sidsky, A.V.Nestsiaronak, A.A.Mayevski, K.D.Danilchenko, D.V.Zhigulin, V.A.Pilipenko, R.Subasri, N.V.Gaponenko, Photoactive properties of transport sol-gel layers based on strontium titanate for perovskite solar cells, Photonics, 2023, V. 10(7), P. 845.
  15. T.A.Pomelova, M.S.Tarasenko, I.V.Yushina, V.V.Malyutina-Bronskaya, V.E.Fedorov, N.G.Naumov, Optimization of R2O2Se (R = La, Gd, Y) synthesis for the preparation of optical materials, Inorganic Materials, 2023, V. 59, P. 12-20.
  16. Ayvazyan, G.Y., Danilchenko, K.D., Kovalenko, D.L. et al. Synthesis, Investigation and Neural Network Modeling of the Properties of Sol-Gel ITO/ZnO and ITO/ZnO:Mg Structures. J. Contemp. Phys. 58, 266–273 (2023). https://doi.org/10.1134/S1068337223030064
  17. V. M. Kravchenko, V. V. Malyutina-Bronskaya, H. S. Kuzmitskaya, A. V. Nestsiaronak Optically transparent highly conductive contact based on ITO and copper metallization for solar cells// Modern Electronic Materials. – 2024. – Vol. 10, No. 2. – P. 85-90. – DOI 10.3897/j.moem.10.2.129762.
  18. Khakhomov, S. et al.(2024). ITO-Based Sol-Gel Layers Containing Rare Earth Complexes for Solar Cells and Optoelectronics. In: Ono, Y., Kondoh, J. (eds) Recent Advances in Technology Research and Education. Inter-Academia 2023. Lecture Notes in Networks and Systems, vol 939. Springer, Cham. https://doi.org/10.1007/978-3-031-54450-7_31.
  19. Semchenko, A. et al.(2024). Photosensitivity of ZnOx:MgOxNanocomposite Sol-Gel Films on the Surface of Silicon Depending on Temperature. In: Ono, Y., Kondoh, J. (eds) Recent Advances in Technology Research and Education. Inter-Academia 2023. Lecture Notes in Networks and Systems, vol 939. Springer, Cham. https://doi.org/10.1007/978-3-031-54450-7_30.
  20. A. D. Zamkovets, S A. Tikhomirov, L. V. Baran, H. S. Kuzmitskaya, V. V. Malyutina-Bronskaya, I. Y. Frolov, P. V. Duong, P. H. Minh Influence of annealing on optical, morphological and electrophysical properties of granular silver nanostructures// Proceedings of the National Academy of Sciences of Belarus. Рhysics and Mathematics series, 2024, vol. 60, no. 3, рр. 242–251, https://doi.org/10.29235/1561-2430-2024-60-3-242-251

1. Areas of scientific research:

The electrical-physical studies of MOS-structures, transport properties in MOS-structures; defects on the interface of oxide/semiconductors systems; up- and down conversion; thin films technology; optical materials; nanocomposites, nanostructures based on ZnO with rare-earth elements; silicon avalanche photodiode, UV-photodiode structures; solar cells technology; detectors of ionizing radiation, methodology for measuring the characteristics and parameters of optical materials and structures.